Silicon carbide power devices are widely utilized in applications requiring high voltage and current. Due to the limited current capability of a single module, silicon carbide MOSFETs are frequently arranged in parallel to enhance the current capacity of the final product. However, variations in circuit parameters or inconsistencies in semiconductor manufacturing can cause imbalances in the current among the parallel modules, potentially resulting in performance and dependability challenges. To tackle the matter, this paper introduced the use of an active approach designed for Paralleled SiC MOSFETs to resolve these unbalanced currents. The proposed method used a current transformer to detect the imbalance current. Further, an active compensator is presented within a closed-loop control feedback that effectively eliminates the current imbalance among parallell modules in a master-slave configuration. Details of current transformer and stability of the closed-loop control are investigated. Experimental results are provided to showcase the viability and efficiency of the proposed approach.

In this study, the design and operational performances of a double thyratron, model TGI1 1000/25, connected in parallel to be applied in metal vapor lasers (MVLs) and their effects on heat dissipation and other limiting factors such as average current ; plate breakdown and anode heating factors; are presented. The sharing frequency between the used thyratrons is the main factor which is used in the applied design. Our measurements for the ohmic and capacitive loads, and also the laser tube with the use of anode tank water temperature measurements to obtain the heat dissipation in two different designs consist of single and double thyratrons configurations show that in the latter design, the average current and the heat dissipation are reduced to their half values compared to those of the former design. With the obtained experimental results, it is possible to apply a number of low power thyratrons in high power MVL lasers, where their input electric powers are higher than 2.5kW.

This paper is intended to investigate the impact of structural parameters (in particular: body thickness (TBody), Source/Drain Length (LS /LD) and gate oxide thickness (TOX)) on the electrical characteristics of nanoscale Double Gate SOI MOSFET (DG SOI MOSFET) in subthreshold regime. It will be shown that a reduction in Ls /Ld doesn’t have a profound effect on both on-current and Drain Induced Barrier Lowering Effect (DIBL); however it increases the effective Gate Capacitance (CGeff) significantly. A decrease in Tbody results in an increase in CGeff and a decrease in potential barrier height while ION is reduced.This investigation also proves that as TOX is increased, CGeff is decreased. A decline in TOX reduces ION while it drastically increases ION /IOFF ratio.

In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results. In this paper by using the three-dimensional simulation of ISE-TCAD software, the indicating factors of body resistance in nanometer transistors and then are shown, using the surface potential model. A mathematical relation to calculat the body resistance incorporating device width and body potential was derived. Excellent agreement was obtained by comparing the model outputs and threedimensional simulation results.

A simple general-purpose I-V model for all operating modes of deep-submicron MOSFETs is presented. Considering the most dominant short channel effects with simple equations including few parameters, a reasonable trade-off between simplicity and accuracy is established. To further improve the accuracy, model parameters are optimized over various channel widths and full ranges of operating voltages using a heuristic optimization algorithm. The obtained results demonstrate only 1. 28% and 0. 97% average error in IBM 0. 13um CMOS technology node for NMOS and PMOS, respectively, comparing with the accurate physically-based BSIM3 model. Furthermore, the tolerance of the model accuracy against parameters variation is investigated.

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) plays a key role in electronic industry in recent years. Among MOSFETs, double gate (DG) transistor is an important device. During last decade, many efforts have been accomplished to improve the device properties. A new structure of the double gate (DG) transistor on SOI technology is proposed in this paper. In SOI technology, buried oxide as insulating layer has lower thermal conductivity than silicon and makes some problems for nano-scale MOSFETs. Incorporating a silicon window under the channel region and two spacers reduces maximum temperature of device. The simulation with ATLAS simulator shows that by optimizing the length and thickness of the silicon window, an acceptable device temperature would be achieved and makes the double gate structure more reliable for nano-scale applications at high temperature. Drain current, lattice temperature, electron mobility, hole density, threshold voltage, subthreshold swing and off current are improved in the new structure.

Influences of source and drain recess structures on SiGe epitaxy growth, SiGe step height, facet formation, ID, sat and resistance performance are investigated. Growth rate of SiGe height increases with decreased recess width at a fixed depth of 62 nm. Under a fixed recess width of 96.3 nm, the deeper the recess, the higher the growth rate of SiGe height. An increase in the depth/width ratio of the recessed Si geometry may promote SiGe {001} growth. Upon the recess, SiGe step height is influenced by the initial SiGe orientation. A longer {001} facet of SiGe initial orientation causes a higher growth rate of SiGe step height. Higher IDsat and lower resistance can be achieved by increasing SiGe volume with wider recess width, deeper recess depth, and higher SiGe step height.

Background: Obesity is one of the causes of insulin resistance. Although it has been speculated that nettle is probably a safe treatment for insulin resistance, considering the shortage of evidence on its effects, we aimed to assess the effect of nettle extract on insulin resistance and metabolic parameters in obese children. Methods: In this Paralleled-randomized controlled clinical trial, 64 children aged 12 - 18 years with obesity were randomly divided into two groups. The intervention group received nettle syrup twice a day for 12 weeks in addition to a specific diet, and the control group followed the diet alone. Demographic characteristics and metabolic results, and lipid profile were checked. Data were analyzed by IBM SPSS Statistics Version 24.0, and a P-value < 0.05 indicated statistical significance. Results: The results showed that most patients in the groups were girls. In the inter-group analyses, results showed significant differences in terms of FBS (P = 0.043), LDL (P = 0.023), and Homeostatic Model Assessment for Insulin Resistance (HOMA-IR) (P = 0.025) after eight weeks. Although FBS (P = 0.044) had a significant difference in the 12th week and was higher in the intervention group, it was still in the normal range. Conclusions: This study revealed that administering nettle syrup can be helpful for patients with obesity with no significant adverse effects, and it considerably reduced LDL, T-Chol, and HOMA-IR. Despite our promising results, further multicenter studies with larger sample sizes in this age group can be beneficial to confirm our results.

Background: Episiotomy is the most commonly performed surgical procedure during delivery, and its associated pain is a major problem in obstetrics. This study aimed to determine the effect of Olea ointment on the severity of post‑ episiotomy pain in primiparous women. Materials and Methods: This Paralleled randomized controlled clinical trial was performed on 73 primiparous women in Al‑ Zahra hospital in Rasht, Iran in 2017-2018. Women were randomly allocated into intervention (n = 39) and control (n = 34) groups. The first intervention was performed 4 h after the episiotomy. This continued every 8 h for 10 days. The pain intensity of episiotomy was assessed by the Visual Analogue Scale (VAS) before intervention, 2 and 24 h after the beginning of intervention, and 5 and 10 days after childbirth. Descriptive and inferential statistics (Mann-Whitney, Fisher exact test, Independent t‑ test, Friedman test, and Chi‑ square) were performed for statistical analysis. Results: There were no significant differences among two groups in terms of demographic and obstetrics characteristics. The severity of pain in intervention and control group before the intervention was not statistically significant, but the variable depicted a meaningful difference between the groups 2 h after the intervention (U = 483. 50, p = 0. 021), 24 h after the intervention (U = 489. 50, p = 0. 019), as well as the 5th day (U = 112. 50, p < 0. 001) and 10th day postpartum (U = 136. 50, p < 0. 001). Conclusions: Based on the findings, Olea ointment could be used effectively for reducing of episiotomy pain. Similar studies are recommended.